Gallium Nitride Market Size, Share and COVID-19 Impact Analysis, By Type (P-Type and N-Type), By End-Use Industry (Consumer Electronics, Automotive, Telecommunications, Healthcare and Others), and Regional Forecast, 2024-2032

Gallium nitride (GaN) is a crystalline substance used for semiconductors, light emitting devices and radio frequency components. It has high breakdown voltage, huge electric field, and low conduction resistance. It also have high thermal and heat capacity. Gallium nitride semiconductors are widely used in smartphones, laptops, gaming devices, televisions and other electronic devices. Its higher radiation stability and ability to function at high temperature makes it material of choice for space and military applications.

Increasing demand for electronic devices including smart phones, laptops, televisions, etc. coupled with rising digitalization is anticipated to drive the global gallium nitride market. Gallium nitride semiconductors have wide bandgap with high energy-efficiency. Faster switching speed of the gallium nitride reduces time required for charging of electronic devices. Gallium nitride devices are highly suitable for high frequency devices. Increasing adoption of GaN semiconductors in the military and space industry is anticipated to further boost the global gallium nitride market in the near future.

Availability of efficient alternatives such as silicon derivatives are to hinder the growth of gallium nitride market in the near future. Silicon derivatives such as trimethylsilane and silicon carbide offers superior properties such as high power efficiency at high voltage, high flexibility and reliability in power factor correction, power rectification and power amplification. However, the limited availability of silicon is anticipated to push the demand of gallium nitride semiconductors.

Impact of COVID-19 on the Gallium Nitride Market

Outbreak of the COVID-19 negatively impacted the global gallium nitride market. This was due to disruption of supply chains caused by restrictions on the movement and trade activities. There was also a decrease in demand from end-use industries owing to decreased demand for their products from the market. However, outbreak of the COVID-19 has further pushed the ongoing digitalization. This has resulted into increased demand for consumer electronics. Moreover, with the significant control on the spread of COVID-19, different industries such as telecommunications, automotive, healthcare and space has gained momentum. This is anticipated to significantly boost the global gallium nitride market.

Key Insights

The report will cover the following key insights:

• Regulatory Scenario of Gallium Nitride Market


• Key Developments in Gallium Nitride Market


• Impact of COVID-19 on Gallium Nitride Market

Analysis by Type

Depending on the types of semiconductors, gallium nitride market is segmented into P-type and N-type. P-type semiconductor held the largest share of the gallium nitride market in 2021 and expected to retain its position in the near future. P-type semiconductor is a positive semiconductor. It means it is doped with an acceptor. High share held by the P-type can be attributed to their increased demand for photodiode, solar cells, LED, laser, and optoelectronics.

Analysis by End-Use Industry

On the basis of end-use industry, gallium nitride market is segmented into consumer electronics, automotive, telecommunications, healthcare and others. Among these, consumer electronics held the largest share of the global gallium nitride market in 2021. Rising digitalization and increased consumer spending has caused increase in demand for consumer electronics. Moreover, the power efficient gallium nitride devices decrease the charging time of the electronic devices. This has resulted into increased demand for gallium nitride from consumer electronics good.

Regional Analysis

The global gallium nitride market has been categorized into North America, Europe, Asia Pacific, Latin America and Middle East & Africa. North America held the largest share of the global gallium nitride market followed by Europe. Technology assisted, sophisticated and fast spaced lifestyle in the North America and Europe are the major factors behind the significant share held by the region. Increasing demand of the GaN semiconductor devices for computers, laptops, and television and gaming devices is anticipated to further boost the market growth.

Asia-Pacific holds the significant share of the global gallium nitride market and anticipated to grow at a fastest rate. Rapidly growing automotive and consumer electronics industry in the region are the major factors for the growth of gallium nitride market in the region. Replacement of the silicon based semiconductors by gallium nitride due to limited availability of the former is another significant factor contributing to the growth market in the region.

Latin America, Middle East & Africa are projected to witness considerable growth due to increased consumer spending on electronic goods in the region. Rising military & space industry and automotive industry in the region are also anticipated to contribute to the growth of gallium nitride market in the region.

Key Players Covered

The report will include the profiles of key players such as GaN systems, Cree Inc., FUJITSU, Efficient Power Conversion Corporation, Koninklijke Philips N.V., Qorvo, Mitsubishi Chemical Corporation, Infineon Technologies Ag, ON Semiconductor, Panasonic Corporation, Taiwan Semiconductor Manufacturing Company, Texas Instruments Incorporated, VisIC Technologies, TOSHIBA CORPORATION, and others.

Segmentation

Key Industry Developments

• In December 2021, Mitsubishi Chemical Corporation confirmed the growth of 4-inch GaN Crystal at the world’s largest demonstration facility for manufacturing GaN Substrates. It will help in the development of ultra-high-efficiency devices. Company has scheduled its market supply in the financial year 2022


• In August 2022, Qorvo, a leading global provider of connectivity and power solutions, announced that it has introduced the highest gain 100 watt L-band (1.2-1.4 GHz) compact solution: a GaN-on-SiC power amplifier module (PAM) targeting commercial and defense radar applications.