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Gallium Nitride Device Market to Reach $28.40 Bn by 2027; Rising Usage in Combat Aircraft to Develop Tactical Radios will Favor Growth

January 21, 2021 | Aerospace & Defense

The global gallium nitride (GaN) device market size is projected to reach USD 28.40 billion by 2027. The rising usage of gallium nitride semiconductors in radar designing would impact growth positively. They are also used in combat aircraft for the development of tactical radios to enable wideband communications. Fortune Business Insights™ presented this information in a new report, titled, “Gallium Nitride Device Market Size, Share & COVID-19 Impact Analysis, By Device Type (Opto-Semiconductor Device, Power Semiconductor Device, and RF Semiconductor Device), By Wafer Size (2-Inch Wafer, 4-Inch Wafer, and 6-Inch and Above Wafer), By Component (Transistor, Diode, Rectifier, Power IC, and Other), By Application (Light Detection & Ranging, Wireless and EV Charging, Radar and Satellite Radio Frequency, and Others), By End User (Aerospace, Defense, Healthcare, Renewables, Information and Communication Technology, and Others) and Regional Forecast, 2020-2027.” The report further states that the market stood at USD 20.56 billion in 2019. But, it is set to exhibit a CAGR of 4.28% during the forecast period between 2020 to 2027.


Zhengzhou Yutong Group to Use Cree 1200V Silicon Carbide Devices in Electric Buses


In June 2020, Cree, Inc. and StarPower Semiconductor declared that Zhengzhou Yutong Group Co., Ltd., a manufacturer of commercial vehicles, such as electric buses based in China, is set to use Cree 1200V silicon carbide devices. They will be mainly utilized in a Starpower power module for its powertrain system for electric buses. Both companies are striving persistently to commercialize the adoption of silicon carbide-based inverters.


To get a detailed report summary and research scope of this market, click here:


https://www.fortunebusinessinsights.com/gallium-nitride-gan-devices-market-103367


High Demand for Performance Reliability in Radio Communications to Aid Growth


Nowadays, technologically advanced GaN devices are being used extensively in the defense and aerospace sector. It is one of the major factors that are set to drive the gallium nitride device market growth in the near future. Additionally, the increasing demand for performance reliability and high bandwidth in electronic warfare, radars, and radio communications would contribute to this growth. However, the reduction of defense budget owing to the COVID-19 pandemic may obstruct growth.


Partnerships and New Contract Winning — Vital Strategies of Key Players


The market houses many leading gallium nitride device providers that are mainly aiming to strengthen their positions through various organic and inorganic strategies, such as collaborations, mergers and acquisitions, and partnerships. Some of the others are competing to win new contracts from various governmental organizations.


Fortune Business Insights™ lists out the names of all the gallium nitride device manufacturers operating in the global market. They are as follows:



  • Cree, Inc. (The U.S.)

  • Infineon Technologies AG (Germany)

  • Efficient Power Conversion Corporation. (The U.S.)

  • EPISTAR Corporation (Taiwan)

  • GaN Systems (Canada)

  • MACOM (The U.S.)

  • Microsemi (The U.S.)

  • Mitsubishi Electric Corporation (Japan)

  • NICHIA CORPORATION (Japan)

  • Northrop Grumman Corporation (The U.S.)

  • NXP Semiconductors. (Netherland)

  • Qorvo, Inc (The U.S.)

  • Texas Instruments Incorporated. (The U.S.)

  • Toshiba Corporation (Japan)


A Noteworthy Industry Development-



  • April 2020: Lockheed Martin, an advanced technologies company headquartered in the U.S. provided its first ever Q-53 system equipped with GaN to the U.S. Army. This will help the Army to enhance and grow the system’s capabilities for catering to the transforming mission needs. These modules will offer the radar with high reliability and additional power. At the same time, they will have multi-mission, counterfire target acquisition (CTA), and extended range.


Further Report Findings-



  • In 2019, North America procured USD 7.38 billion in terms of revenue. The region is set to dominate throughout the forthcoming years backed by the rising implementation of gallium nitride devices and other innovative technologies in Canada and the U.S. Also, several private companies, such as Qorvo and Texas Instruments Incorporated are trying to raise funds to develop GaN devices in the U.S.

  • Asia Pacific is expected to grow considerably because of the high demand for GaN devices from developing countries, namely, India and China. They are increasingly using them in the defense industry.

  • Based on end-users, the information and communication technology segment is likely to lead by holding the largest gallium nitride devices market share. The rising adoption of IoT for commercial applications is one of the major factors for the growth of this segment.


The global market can be segmented in the following way:


















































 ATTRIBUTE



  DETAILS



Study Period



  2016-2027



Base Year



  2019



Forecast Period



  2020-2027



Historical Period



  2016-2018



Unit



  Value (USD billion)



Segmentation



By Device Type



  • Opto-Semiconductor Device

  • Power Semiconductor Device

  • RF Semiconductor Device



By Wafer Size



  • 2-Inch Wafer

  • 4-Inch Wafer

  • 6-Inch and Above Wafer



By Component



  • Transistor

  • Diode

  • Rectifier

  • Power IC

  • Other



By Application



  • Light Detection & Ranging

  • Wireless and EV Charging

  • Radar and Satellite Radio Frequency

  • Others



By End User



  • Aerospace

  • Defense

  • Healthcare

  • Renewables

  • Information and Communication Technology

  • Others



 



By Geography



  • North America (By Device Type, By Wafer Size, By Component, By Application, By End User, and By Country)



  • The U.S. (By Device Type)

  • Canada (By Device Type)



  • Europe (By Device Type, By Wafer Size, By Component, By Application, By End User, and By Country)



  • The U.K. (By Device Type)

  • Germany (By Device Type)

  • France (By Device Type)

  • Russia (By Device Type)

  • Italy (By Device Type)

  • Rest of Europe (By Device Type)



  • Asia-Pacific (By Device Type, By Wafer Size, By Component, By Application, By End User, and By Country)



  • China (By Device Type)

  • India (By Device Type)

  • Japan (By Device Type)

  • Australia (By Device Type)

  • South Korea (By Device Type)

  • Rest of Asia- Pacific (By Device Type)



  • Middle East (By Device Type, By Wafer Size, By Component, By Application, By End User, and By Country)



  • Saudi Arabia (By Device Type)

  • Israel (By Device Type)

  • Turkey (By Device Type)

  • Rest of the Middle East (By Device Type)



  • Rest of the World (By Device Type, By Wafer Size, By Component, By Application, By End User, and By Country)



  • Africa (By Device Type)

  • Latin America (By Device Type)


Global Gallium Nitride (GaN) Device Market
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  • 2019
  • 2016-2018
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