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IGBT Market to Touch $11.24 Billion by 2028; Launch of 650 V CoolSiC Hybrid IGBT Range by Infineon Technologies AG to Propel Market

July 13, 2021 | Information & Technology

The global insulated gate bipolar transistor market size is expected to reach USD 11.24 billion by 2028. The growing popularity of hybrid vehicles will create colossal opportunities for the global market, in a report, titled, “Insulated Gate Bipolar Transistor (IGBT) Market Size, Share & COVID-19 Impact Analysis, By Voltage (Low Voltage, Medium Voltage, and High Voltage), By Application (Consumer Electronics, Industrial Manufacturing, Automotive (EV/HEV), Inverters/UPS, Railways, Renewables, and Others), and Regional Forecast, 2021-2028.” As per the report, the market size stood at USD 5.40 billion in 2020 and is expected to exhibit a CAGR of 9.8% between 2021 and 2028.


Due to the scarcity of materials amid the COVID-19 outbreak, the production of insulated gate bipolar transistors has been severely disrupted. Nevertheless, following the pandemic, the industry is projected to expand significantly because of increased clean energy adoption, increased demand for electric vehicles, and increased automation and industrial revolution.


Release of 7th-Generation X Series IGBT Module by Fuji to Augment Growth


Fuji Electric Co., Ltd., Pressure transmitters, flowmeters, gas analyzers, regulators, inverters, pumps, engines, ICs, motors, and power devices are all manufactured by this Japanese electrical equipment corporation. The company recently announced the commercial manufacturing of its HPnC*1 for the rail industry, which would be configured with a 7th-generation X Series IGBT*2 modules. The HPnC, a high-capacity IGBT module, has the ability to reduce power loss and save electricity. As per the company, the electric railway industry is projected to expand at a 6% annual pace, hitting about 50 to 60 billion yen in 2023. The bulk production of HPnC will have an outstanding effect on the IGBT market share. As HPnC has some of the industry's best low-loss performance, it will be highly efficient. Fuji Electric cut the internal inductance, which interferes with high-speed switching, by 76 percent compared to traditional devices by improving the kit configuration, resulting in low losses.


To get a detailed report summary and research scope of this market, click here:


https://www.fortunebusinessinsights.com/industry-reports/igbt-module-market-100501


Rapid Shift towards EVs to Favor IGBT Market Growth


Climate change and global warming are raising public understanding of energy supplies in all fields. The car industry is one of them, and as it moves on in its energy-saving mode, there is a growing market for electric vehicles (EVs) and hybrid cars. Considering government incentives, major automakers are planning to invest in the production of innovative electric vehicles. Users are now being compelled to move from conventional cars to electric vehicles due to increasing fuel costs. The demand for insulated gate bipolar transistors is expected to rise as a result of this. Hence, fostering this industry.


Mitsubishi Electric Corporation to Dominate the Market


As per the report, the market is dominated by several prominent companies. This includes corporations such as Hitachi, Mitsubishi Electric Corporation, Infineon Technologies AG, ABB Ltd., and Fuji Electric Co. Ltd. Major manufacturers are turning to emerging technology to create advanced transistors to meet growing automotive demand for high-power applications. Advanced automotive IGBTs based on medium and high-power modules are being developed by companies including Fuji Electric Co., Ltd., and Mitsubishi Electric Corporation. For instance, Mitsubishi Electric Corporation introduced the LV100-type T-series IGBT module for industrial applications in August 2020. The module helps power converters and inverters lose less power and take up less room. These converters and inverters are used in clean energy applications, including wind turbines, photovoltaic panels, and high-capacity motor drives.


Key Development:



  • February 2021: Infineon Technologies AG introduced the 650 V CoolSiC Hybrid IGBT range. The advanced transistor encompasses 650 V blocking voltage. The hybrid range offers benefits, including Schottky barrier CoolSiC diodes and 650 V TRENCHSTOP 5 IGBT.


The Report Lists the Key Companies in the Global Market:



  • Infineon Technologies AG (Munich, Germany)

  • Danfoss Group (Nordborg, Denmark)

  • ROHM CO., LTD (Kyoto, Japan)

  • Hitachi, Ltd. (Tokyo, Japan)

  • ABB Ltd (Zürich, Switzerland)

  • Mitsubishi Electric Corporation (Tokyo, Japan)

  • Fuji Electric Co., Ltd. (Tokyo, Japan)

  • Toshiba Corporation (Tokyo, Japan)

  • LITTELFUSE, INC. (Illinois, United States)

  • StarPower Semiconductor Ltd. (Jiaxing, China)


Further Report Findings:


Regional Insights:



  • The increasing awareness about renewable resources will aid growth in North America.

  • The rising demand for Electric Vehicles (EVs) and favorable government initiatives will promote expansion in Asia Pacific.

  • The growing adoption of IGBT devices across consumer electronics and railways will uplift the insulated gate bipolar transistor market in Latin America and the Middle East, and Africa.


Leading Segment: Based on application, the market is grouped into consumer electronics, industrial manufacturing, automotive (EV/HEV), renewables, inverters/UPS, railways, and others (energy and power, traction, and others). Among this, the automotive sector is expected to hold a significant share on account of the increasing adoption of bipolar transistors in driving motors.


The global market is segmented in the following manner:














































  ATTRIBUTE



  DETAILS



Study Period



  2017-2028



Base Year



  2020



Forecast Period



  2021-2028



Historical Period 



  2017-2019



Unit



  Value (USD Billion)



Segmentation



  Voltage; Application; and Geography



By Voltage




  • Low Voltage

    • Up to 600 V

    • 601 - 1200 V



  • Medium Voltage

    • 1700 V

    • 2500 V



  • High Voltage

    • 3300 V

    • 4500 V & above





By Application




  • Consumer Electronics

  • Industrial Manufacturing

  • Automotive (EV/HEV)

  • Inverters/UPS

  • Railways

  • Renewables

  • Others



By Region




  • North America (By Voltage, By Application, and By Country)

    • United States

    • Canada  





  • Europe (By Voltage, By Application, and By Country)

    • UK

    • Germany

    • Italy

    • Spain

    • Scandinavia

    • France

    • Rest of Europe





  • Asia Pacific (By Voltage, By Application, and By Country)


    • China  

    • Japan  

    • India  

    • Southeast Asia  

    • Rest of Asia Pacific




  • The Middle East & Africa (By Voltage, By Application, and By Country)

    • GCC  

    • South Africa  

    • Rest of the Middle East & Africa





  • Latin America (By Voltage, By Application, and By Country)

    • Brazil  

    • Mexico  

    • Rest of Latin America




Insulated Gate Bipolar Transistor (IGBT) Market
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  • 2017-2019
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