GaN Power Device Market Size, Share & Industry Analysis, By Type (GaN Power Discrete Devices, GaN Power ICs, GaN Power Modules), By Voltage Range (Low Voltage (Below 200 Volt), Medium Voltage (200,600 Volt), High Voltage (Above 600 Volt)), By Application (Power Drives, Supply and Inverter, Radio Frequency), By End User (Commercial, Military) and Regional Forecast, 2023-2030

Gallium Nitride (GaN) power device is a high electron mobility transistor with a higher electric field strength than the silicon power devices. GaN material has wide band gap that offers high performance, therefore it is a feasible substitute to pure silicon in electronics and semiconductor field. This material is majorly used in very high voltage power applications. The GaN material based power device offers high efficiency, high power handling capacity, and fast switching. Such advantages can make GaN power devices is a primary solution for various end user industries such as aerospace and defense, automotive, consumer electronics and among others.

The GaN power device market has been segmented on the basis of device type, voltage range, application, end user and region. On the basis of type, the market is bifurcated into power discrete devices, power ICs, and power modules. The GaN power discrete device segment includes RF power device and non-RF power devices.

Key Market Driver -

• Rising adoption of GaN RF Power Device in aerospace and defense industry • Growing worldwide focus on fuel conservation • Growing aircraft deliveries across the globe

Key Market Restraint -

• High penetration of Si based power devices • Lack of availability of GaN Material

Currently, the demand for GaN power device is increased worldwide as it improves the fuel economy by reducing switching losses. Also, the fuel saving feature of GaN power devices can make it an ideal solution for the aerospace and defense industry applications including, satellite communication, missiles, radars, and electronic warfare among others. Therefore, the increased adoption of GaN power devices in aerospace and defense industry applications are expected to drive the market growth. Furthermore, the GaN power devices enable the use of high power in a variety of bands by supplying high watts at RF frequencies. Thus, the GaN power device was firstly developed and used in Iraq to make improvised explosive device (IED) jammer. And now it is used in electronic warfare. This increased adoption has further expected to boost the demand for GaN based power devices in defense sector. Also the growing use of GaN power devices in wireless chargers is also likely to fuel the market during the forecast period. Moreover, the growing production of aircraft owing to the increased air traffic and cumulative use of GaN in 5G network application will likely to create ample of opportunity for GaN power device market in near future.

Key Players Covered:

Some of the key players in the GaN power device market include Microsemi Corporation (The U.S.), Analog Devices, Inc. (The U.S.), Cree, Inc. (The U.S.), Qorvo, Inc. (The U.S.), MACOM Technology Solutions (The U.S.), Efficient Power Conversion Corporation (The U.S.), Integra Technologies, Inc. (The U.S.), Transphorm Inc. (The U.S.), Navitas Semiconductor Inc. (The U.S.), NXP Semiconductors N.V. (The Netherland), Texas Instruments, Inc (The U.S.), Infineon Technologies AG (Germany), On Semiconductor Corporation (The U.S.), Texas Instruments, Inc (The U.S.) and among others.

Based on the type of the GaN power discrete device market power module is estimated to witness massive growth during the forecast period 2019-2026. The rising adoption of GaN RF power devices in various industry verticals for high power application is fueling the GaN power device market growth.

Regional Analysis:

The GaN Power Device Market is analyzed across the major regions including North America, Europe, Asia Pacific, and rest of the world

North America is anticipated to lead the GaN power device market and witnesses to maintain the position during the forecast timeline. This large market share is due to the presence of large number of GaN power device manufacturers in the U.S. Also the high investment in space R&D and defense domain is projected to drive the GaN Power Device Market in North America.

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Followed by North America, Asia Pacific will show significant growth in upcoming years due to the growing adoption of GaN power devices across various industries such as defense, aerospace, automotive, military, and telecommunication in emerging economies such as China and India. Also the increase investments in R&D and military up-gradation programs from countries like China, India, and Japan are also expected to drive the market in Asia Pacific during the forecast period.

Segmentation

Key Industry Developments

• In 2019 – Panasonic Corporation showcased its newly developed GaN and Si based power device at Applied Power Electronics Conference and Exposition (APEC). The novel product, Panasonic 600V X-GaN power transistor offers high heat capacity, thermal conductivity and enhanced 600 V breakdown mode. Also the high-speed operations of 600V X-GaN power transistor provide enhanced power conversion efficiency and reduced size.
• In 2018 – Panasonic Corporation introduced its newly designed Insulated-Gate GaN Power Transistor which is capable of continuous stable operations with removed threshold voltage variation. This technology was expected to further increase the speed of GaN power device which make it possible the further miniaturization of electronic products.
• In 2017 – MACOM Technology Solutions introduced its newly developed GaN [power device for pulsed L-Band radar systems that used for airport surveillance radar (ASR) applications.