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GaN & SiC Power Semiconductor Market Size, Share & Industry Analysis, By Product (Sic Power Module, GaN Power Module, Discrete SiC, Discrete GaN), By Application (Power Supplies, Industrial Motor Drives, H/EV, PV Inverters, Traction, Others) And Regional Forecast, 2024-2032

Region :Global | Report ID: FBI105987 | Status : Ongoing



The next-generation materials to replace silicon, SiC (silicon carbide) and GaN (gallium nitride), are attracting a lot of attention. GaN and SiC power semiconductors are small and dependable power devices that outperform silicon-based devices in terms of efficiency. In a variety of power applications, such as automotive electronics, industrial motors, and PV inverters, these GaN & SiC power semiconductors assist to minimize volume, weight, and life cycle costs. Silicon is a straightforward material. SiC is a carbon and silicon combination, whereas GaN is a gallium and nitrogen compound. As a result, semiconductors that use these chemicals are referred to as "compound semiconductors. “GaN and SiC have a larger band gap than silicon, earning them the moniker "Wide Band Gap Semiconductors. “The dielectric breakdown field strength is used to identify wide-bandgap semiconductors. When aiming to attain the same breakdown voltage, this permits the withstand voltage layer to be manufactured considerably thinner than that of silicon.

Improvements in the quality of SiC wafer substrates used in semiconductor materials have resulted in the usage of bigger diameter wafers in recent years. As a result, high-current, low-cost devices have been created and are starting to be used in a variety of equipment. A GaN wafer substrate, on the other hand, is still expensive, therefore most people use a horizontal arrangement with a GaN active layer produced on a low-cost silicon substrate. GaN is projected to be utilized in applications that need exceptionally high-speed switching operation, despite the fact that creating a high current product is challenging.

In 2020, the pandemic crisis had a significant influence on the growth of the GaN and SiC power semiconductor markets. Various countries enforced a lockdown, which resulted in the closure of several production sites of market leaders and end-use OEMs such as electric vehicle makers, solar component manufacturers, and so on. The lockout, on the other hand, has pushed the trend toward work-from-home initiatives and provided an opportunity for local businesses to acquire a substantial edge in the computing device segment, UPS, and other areas. In addition, the pandemic has encouraged GaN and SiC power semiconductor firms to expand their geographic footprint in new locations in order to realign supply chain operations.

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Key Market Driver -

Factors like rising government initiatives, increasing penetration of electric vehicles and technology innovation are growing to drive the GaN & SiC Power Semiconductor Market.

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Key Market Restraint -

High manufacturing cost and Usage of conventional silicon materials will restrain the market growth.

Key Players

Alpha and Omega Semiconductor, Fuji Electric Co., Ltd, Infineon Technologies AG, Littelfuse, Inc., Microsemi, Mitsubishi Electric Corporation, Renesas Electronics Corporation, ROHM SEMICONDUCTOR, SANKEN ELECTRIC CO.,LTD., STMicroelectronics, Epiluvac, IQE PLC, Transphorm Inc., SweGaN, Saint-Gobain, GeneSiC Semiconductor Inc.., Sublime Technologies and others are some of the key players of this market.

Regional Analysis

Because of the growing number of solar power plant installations in the United States, the GaN and SiC power semiconductor industry in North America is expected to develop at a quick pace. According to a news release issued by the Solar Energy Industries Association in December 2020, in the third quarter of 2020,

In Asia Pacific region, GaN and Sic power semiconductor devices are rapidly gaining market share, with GaN and Sic devices progressively replacing silicon equivalents in many application areas such as consumer and enterprise, telecommunications, automotive, and industrial. In terms of manufacture and distribution, China is the greatest provider of raw materials to the wide bandgap semiconductor sector. This is also predicted to have an indirect beneficial influence on the GaN and Sic semiconductor device market's sales growth in Asia Pacific region.

Because of the increased government attempts to promote electric car adoption in the country, the GaN & SiC power market in Europe is developing at a phenomenal rate. The German government, for example, stated in March 2021 that it will provide money for electric vehicle charging infrastructure. Companies participating in the regional market will benefit from these supporting efforts, which will help them accelerate their growth possibilities.

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By Product

  • Sic Power Module

  • GaN Power Module

  • Discrete SiC

  • Discrete GaN

By Application

  • Power Supplies

  • Industrial Motor Drives

  • H/EV

  • PV Inverters

  • Traction

  • Others

By Region

  • North America (the U.S., and Canada)

  • Europe (the U.K., Germany, France, Italy, and Rest of Europe)

  • Asia Pacific (Japan, China, India, South East Asia, and Rest of Asia Pacific)

  • Middle East & Africa (South Africa, GCC, and Rest of the Middle East & Africa)

  • Latin America (Brazil, Mexico, and Rest of Latin America)

GaN & SiC Power Semiconductor Market Industry Developments

  • In March 2019,Alpha & Omega Semiconductor has announced the release of the AONV070V65G1 Gallium Nitride device on its GAN Technology platform. This new gadget has a 650 V and 45 A output, as well as 70mOhm Rds. This new introduction completes the Power MOSFET product range.

  • In March 2019,ON Semiconductor has released the NTHL080N120SC1 and the AEC-Q101 automotive-grade NVHL080N120SC1 silicon-carbide (SiC) MOSFET devices. These new gadgets are specifically intended for use with electric car on-board chargers.

  • Ongoing
  • 2023
  • 2019-2022

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